Germane
From Wikipedia, the free encyclopedia
Germanium tetrahydride | |
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General | |
Systematic name | Germane |
Other names | Germanium tetrahydride germanomethane 'monogermane |
Molecular formula | GeH4 |
Molar mass | 76.62 g mol−1 |
Appearance | Colorless gas |
CAS number | [7782-65-2] [1] |
Properties | |
Density and phase | 3.3 kg m−3 gas. |
Solubility in water | low |
Melting point | −165 °C (108 K) |
Boiling point | −88 °C (195 K) |
Structure | |
Molecular shape | Tetrahedral |
Dipole moment | O D |
Hazards | |
MSDS | External MSDS |
Main hazards | Toxic, flammable |
NFPA 704 | |
Flash point | ? |
R/S statement | R: ? S: ? |
RTECS number | ? |
Supplementary data page | |
Structure and properties |
n, εr, etc. |
Thermodynamic data |
Phase behaviour Solid, liquid, gas |
Spectral data | UV, IR, NMR, MS |
Related compounds | |
Germanium cmpds | GeCl4 |
Other cmpds | CH4 SiH4 |
Except where noted otherwise, data are given for materials in their standard state (at 25°C, 100 kPa) Infobox disclaimer and references |
Germane is the chemical compound with the formula GeH4. It is the simplest germanium hydride and one of the most useful compounds of germanium. Like the related compounds silane and methane, germane is tetrahedral. It burns in air to afford GeO2 and water.
Contents |
[edit] Synthesis and occurrence
Germane is prepared by the reaction of other Ge(IV) compounds with hydride reagents. A typical synthesis involved the reaction of K2GeO3 with Sodium borohydride:[1]
- Na2GeO3 + NaBH4 + H2O → GeH4 + 2 NaOH + NaBO2
Germane has been detected in the atmosphere of Jupiter.[2]
[edit] Use in semiconductor industry
The gas decomposes near 600K to germanium and hydrogen. Because of its thermal lability, germane is used in the semiconductor industry for the epitaxial growth of germanium by MOVPE or chemical beam epitaxy.[3] Organogermanium precursors (e.g. isobutylgermane, alkylgermanium trichlorides, and dimethylaminogermanium trichloride) have been examined as less hazardous liquid alternatives to germane for deposition of Ge-containing films by MOVPE.[4]
[edit] Safety
Germane is flammable, potentially pyrophoric, and toxic.
[edit] References
- ^ Girolami, G. S.; Rauchfuss, T. B. and Angelici, R. J., Synthesis and Technique in Inorganic Chemistry, University Science Books: Mill Valley, CA, 1999.
- ^ Kunde, V.; Hanel, R.; Maguire, W.; Gautier, D.; Baluteau, J. P.; Marten, A.; Chedin, A.; Husson, N.; Scott, N. (1982). "The tropospheric gas composition of Jupiter's north equatorial belt /NH3, PH3, CH3D, GeH4, H2O/ and the Jovian D/H isotopic ratio". Astrophysical J. 263: 443-467. DOI:10.1086/160516.
- ^ Venkatasubramanian, R.; Pickett, R. T.; Timmons, M. L. (1989). "Epitaxy of germanium using germane in the presence of tetramethylgermanium". Journal of Applied Physics 66: 5662-5664. DOI:10.1063/1.343633. ISSN 0021-8979.
- ^ E. Woelka, D. V. Shenai-Khatkhatea, R. L. DiCarlo, Jr.a, A. Amamchyana, M. B. Powera, B. Lamareb, G. Beaudoinc, I. Sagnesc (2006). "Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films". Journal of Crystal Growth 287 (2): 684-687. DOI:10.1016/j.jcrysgro.2005.10.094.
[edit] External links
- Airliquide
- pdf MSDS at MIT
- Designing Novel Organogermanium OMVPE Precursors for High Purity Germanium, Strained Silicon and Relaxed SiGe Structures; D. V. Shenai-Khatkhate, Microelectronic Technologies, Rohm and Haas Electronic Materials LLC North Andover, MA, U.S.A.; Presentation at ACCGE-16, Montana, USA, July 11, 2005.
- Élaboration et Physique des Structures Épitaxiées (LPN) Hétérostructures III-V pour l’optoélectronique sur Si; Article in French from LPN-CNRS, France.
- Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films Journal of Crystal Growth, January 25, 2006.