Indium(III) arsenide
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| Indium(III) arsenide | |
|---|---|
| Image:Indium(III) arsenide.jpg | |
| Systematic name | Indium(III) arsenide |
| Other names | xxx, xxx |
| Molecular formula | InAs |
| Molar mass | 189.74 g.mol-1 |
| CAS number | [1303-11-3] |
| Density | 5680 kg.m-3 |
| Solubility (water) | insoluble |
| Melting point | 942 °C |
| Boiling point | xx.x °C |
| Disclaimer and references | |
Indium arsenide, InAs, or indium monoarsenide, is a semiconductor material, a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with melting point 942 °C.
Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1-3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
Indium arsenide is similar to gallium arsenide. Its CAS number is [1303-11-3] [1].
Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principially similar to alloying indium nitride with gallium nitride to yield indium gallium nitride.
Quantum dots can be formed in a monolayer of indium arsenide on indium phosphide or gallium arsenide. The mismatches of lattice constants of the materials create tensions in the surface layer, which in turn leads to formation of the quantum dots. [2] Quantum dots can also be formed in indium gallium arsenide, as indium arsenide dots sitting in the gallium arsenide matrix.
[edit] See also
[edit] External links
- Ioffe institute data archive entry
- National Compound Semiconductor Roadmap entry for InAs at ONR web site
