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XDR DRAM - Wikipedia, the free encyclopedia

XDR DRAM

From Wikipedia, the free encyclopedia

XDR DRAM is a high performance RAM interface. It is based on Rambus RDRAM, and competes with Synchronous and Double-Data-Rate (DDR) DRAM. XDR was designed to be effective in small, high-bandwidth consumer systems, high-performance memory applications, and high-end GPUs. It eliminates the unusually high latency problems that plagued early forms of RDRAM. Rambus owns the rights to the technology. XDR is used by Sony in the PlayStation 3 console.[1]

Contents

[edit] Parameters

[edit] Performance

  • Initial clock rate at 400 MHz. 600 MHz, 800 MHz and 1 GHz planned
  • Octal Data Rate (ODR): Eight bits per clock per lane provides 3.2 Gbit/s at 400MHz.
  • Each chip provides eight or 16 lanes, providing 25.6 or 51.2 Gbit/s (or 3.2 to 6.4 GB/s) at 400MHz.

[edit] Features

  • Bi-directional differential Rambus Signalling Levels (DRSL)
  • Programmable on-chip termination
  • Adaptive impedance matching
  • Eight bank memory architecture
  • Up to four bank-interleaved transactions at full bandwidth
  • Point-to-point data interconnect
  • Chip scale package packaging
  • Dynamic request scheduling
  • Early-read-after-write support for maximum efficiency
  • Zero overhead refresh

[edit] Power Requirements

  • 1.8 V Vdd
  • Programmable ultra-low-voltage DRSL 200 mV swing
  • Low-power PLL/DLL design
  • Power-down self-refresh support
  • Dynamic data width support with dynamic clock gating
  • Per-pin I/O power-down
  • Sub-page activation support

[edit] Ease of system design

  • Per-bit FlexPhase circuits compensate to a 2.5 ps resolution
  • XDR Interconnect uses minimum pin count

[edit] Latency

  • 1.25/2.0/2.5/3.33 ns request packets

[edit] See also

[edit] External links

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